50N03-11, 50N06, 50NB20 Selling Leads, Datasheet
MFG:SI Package Cooled:TO-252 D/C:00+
50N03-11, 50N06, 50NB20 Datasheet download
Part Number: 50N03-11
MFG: SI
Package Cooled: TO-252
D/C: 00+
50N03-11, 50N06, 50NB20
- Table of contents:
Info of 50N03-11
Info of 50N06
Info of 50NB20
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About 50N02-09
PDF/DataSheet Download
Datasheet: 50N02-09
File Size: 54018 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
About 50N06
PDF/DataSheet Download
Datasheet: 50N06
File Size: 176049 KB
Manufacturer: UTC
Download : Click here to Download
About 50N02-09
PDF/DataSheet Download
Datasheet: 50N02-09
File Size: 54018 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
50N06 General Description
The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching mode power appliances.
50N06 Maximum Ratings
| PARAMETER |
SYMBOL |
RATINGS |
UNIT | |
| Drain-Source Voltage |
VDSS |
60 |
V | |
| Gate to Source Voltage |
VGSS |
±20 |
V | |
| Continuous Drain Current | TC = 25 |
ID |
50 |
A |
| TC = 100 | ||||
| Drain Current Pulsed (Note 1) |
35 |
A | ||
| Single Pulsed Avalanche Energy (Note 2) |
IDM |
200 |
A | |
| Repetitive Avalanche Energy (Note 1) |
EAS |
480 |
mJ | |
| Peak Diode Recovery dv/dt (Note 3) |
EAR |
13 |
mJ | |
| Total Power Dissipation (TC = 25) |
dv/dt |
7 |
V/ns | |
| Derating Factor above 25 |
PD |
130 |
W | |
|
0.9 |
W/ | |||
| Operation Junction Temperature |
TJ |
-55 ~ +150 |
||
| Storage Temperature |
TSTG |
-55 ~ +150 |
||
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
50N06 Features
* RDS(ON) = 23m@VGS = 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer Capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer Capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
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