4N55, 4N55/883, 4N55/883B Selling Leads, Datasheet
MFG:HP D/C:03+04+
MFG:HP D/C:03+04+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: 4N55
File Size: 250060 KB
Manufacturer: HP [Agilent(Hewlett-Packard)]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 4N55
File Size: 250060 KB
Manufacturer: HP [Agilent(Hewlett-Packard)]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 4N55
File Size: 250060 KB
Manufacturer: HP [Agilent(Hewlett-Packard)]
Download : Click here to Download
The 4N55 is a commercial grade two channel hermetically sealed optocoupler in a 16-Pin ceramic DIP package with gold plated leads. Solder dipped leads and various lead form options are also available. See datasheet for details.
The product is capable of operation and storage over the full military temp range and may also be purchased with MIL-PRF-38534 Class Level H or K testing or from DSCC SMD 5962-87679. All devices are manufactured and tested on a MIL-PRF-38534 certified line and are included in the DSCC Qualified Manufacturers List QML-38534 for Hybrid Microcircuits.
Each channel contains a GaAsP LED which is optically coupled to an integrated photon detector. Separate connections for the photodiodes and output transistor collectors improve the speed up to a hundred times that of a conventional phototransistor coupler by reducing the base-collector capacitance.
The device is suitable for wide bandwidth analog applications, as well as for interfacing TTL to LSTTL or CMOS. Current Transfer Ratio (CTR) is 9% min at IF = 16mA. The 18V Vcc capability will enable the designer to interface any TTL family to CMOS. The availability of the base lead allows optimized gain/bandwidth adjustment in analog applications. The shallow depth of the IC photodiode provides better radiation immunity than conventional phototransistor couplers.
These products are also available with the transistor base node connected to improve common mode immunity and ESD susceptibility. In addition, higher CTR minimums are available by special request.
Package styles for this die set in one, two or four channels are 8 and 16-Pin DIP through hole, 16-Pin surface mount DIP flat pack, and 20 pad leadless ceramic chip carrier. Most devices are available with a variety of lead forms and plating options. See datasheet for details.
As the same die (emitters and detectors) are used for each channel of each device listed in the datasheet, absolute maximum ratings, recommended operating conditions, electrical specifications, and performance characteristics shown in the datasheet figures are virtually identical for all parts. Occasional exceptions exist due to package variations and limitations and are as noted. Additionally, the same package assembly processes and materials are used in all devices. These similarities give justification for the use of data obtained from one part to represent other parts performance for reliability and certain limited radiation test results.
The 4N55/883B is a high reliability Class H two channel hermetically sealed optocoupler in a 16-Pin ceramic DIP package with gold plated leads. Solder dipped leads and various lead form options are also available. See datasheet for details.
The product is capable of operation and storage over the full military temp range and may also be purchased as either commercial grade, with MIL-PRF-38534 Class Level K testing, or from DSCC SMD 5962-87679. The device is manufactured and tested on a MIL-PRF-38534 certified line and included in the DSCC Qualified Manufacturers List QML-38534 for Hybrid Microcircuits.
Each channel contains a GaAsP LED which is optically coupled to an integrated photon detector. Separate connections for the photodiodes and output transistor collectors improve the speed up to a hundred times that of a conventional phototransistor coupler by reducing the base-collector capacitance.
The device is suitable for wide bandwidth analog applications, as well as for interfacing TTL to LSTTL or CMOS. Current Transfer Ratio (CTR) is 9% min at IF = 16mA. The 18V Vcc capability will enable the designer to interface any TTL family to CMOS. The availability of the base lead allows optimized gain/bandwidth adjustment in analog applications. The shallow depth of the IC photodiode provides better radiation immunity than conventional phototransistor couplers.
These products are also available with the transistor base node connected to improve common mode immunity and ESD susceptibility. In addition, higher CTR minimums are available by special request.
Package styles for this die set in one, two or four channels are 8 and 16-Pin DIP thru hole, 16-Pin surface mount DIP flat pack, and 20 pad leadless ceramic chip carrier. Most devices are available with a variety of lead forms and plating options. See datasheet for details.
As the same die are used for each channel of each device listed in the datasheet, absolute maximum ratings, recommended operating conditions, electrical specifications, and performance characteristics shown in the datasheet figures are virtually identical for all parts. Occasional exceptions exist due to package variations and limitations and are as noted. Additionally, the same package assembly processes and materials are used in all devices. These similarities give justification for the use of data obtained from one part to represent other parts performance for reliability and certain limited radiation test results.