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The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
4N32M Maximum Ratings
Symbol
Parameter
Value
Units
TOTAL DEVICE
TSTG
TOPR
TSOL
Storage Temperature
Operating Temperature
Lead Solder Temperature (Wave)
-40 to +150
-40 to +100
260 for 10 sec
PD
Total Device Power Dissipation @ TA = 25
Derate above 25
250
3.3
mW
mW/
EMITTER
IF
VR
IF(pk)
Continuous Forward Current
Reverse Voltage
Forward Current Peak (300s, 2% Duty Cycle)
80
3
3.0
mA
V
A
PD
LED Power Dissipation @ TA = 25
Derate above 25
150
2.0
mW
mW/
DETECTOR
BVCEO
BVCBO
BVECO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
30
30
5
V
V
V
PD
Detector Power Dissipation @ TA = 25
Derate above 25
150
2.0
mW
mW/
IC
Continuous Collector Current
150
mA
4N32M Features
High sensitivity to low input drive current Meets or exceeds all JEDEC Registered Specifications UL, C-UL approved VDE 0884 approval available as a test option add option V (e.g., 4N29VM)
4N32M Typical Application
Low power logic circuits Telecommunications equipment Portable electronics Solid state relays Interfacing coupling systems of different potentials and impedances