Current Transfer Ratio
:
Maximum Forward Diode Voltage
: 1.5 V
Maximum Operating Temperature
: + 100 C
Minimum Operating Temperature
: - 40 C
Maximum Power Dissipation
: 250 mW
Packaging
: Bulk
Input Type
: DC
Maximum Collector Current
: 150 mA
Maximum Collector Emitter Voltage
: 30 V
Isolation Voltage
: 5300 Vrms
Maximum Collector Emitter Saturation Voltage
: 1 V
Package / Case
: PDIP-6
Features: High sensitivity to low input drive current
Meets or exceeds all JEDEC Registered Specifications
UL, C-UL approved
VDE 0884 approval available as a test option
add option V (e.g., 4N29VM)
ApplicationLow power logic circuits
Telecommunications equipment
Portable electronics
Solid state relays
Interfacing coupling systems of different potentials and impedancesSpecifications
| Symbol |
Parameter |
Value |
Units |
| TOTAL DEVICE |
TSTG
TOPR
TSOL |
Storage Temperature
Operating Temperature
Lead Solder Temperature (Wave) |
-40 to +150
-40 to +100
260 for 10 sec |
|
| PD |
Total Device Power Dissipation @ TA = 25
Derate above 25 |
250
3.3 |
mW
mW/ |
| EMITTER |
|
IF
VR
IF(pk) |
Continuous Forward Current
Reverse Voltage
Forward Current Peak (300s, 2% Duty Cycle) |
80
3
3.0 |
mA
V
A |
| PD |
LED Power Dissipation @ TA = 25
Derate above 25 |
150
2.0 |
mW
mW/ |
| DETECTOR |
BVCEO
BVCBO
BVECO |
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage |
30
30
5 |
V
V
V |
| PD |
Detector Power Dissipation @ TA = 25
Derate above 25 |
150
2.0 |
mW
mW/ |
| IC |
Continuous Collector Current |
150 |
mA |
| 4N32M |
Full Production |
RoHS Compliant |
$0.207 |
DIP-W |
6 |
BULK |
TBD |
| 4N32SM |
Full Production |
RoHS Compliant |
$0.207 |
SMDIP-W |
6 |
BULK |
TBD |
| 4N32SR2M |
Full Production |
RoHS Compliant |
$0.207 |
SMDIP-W |
6 |
TAPE REEL |
TBD |
| 4N32SVM |
Full Production |
RoHS Compliant |
$0.207 |
SMDIP-W |
6 |
BULK |
TBD |
| 4N32TM |
Preliminary |
RoHS Compliant |
N/A |
DIP-W |
6 |
BULK |
TBD |
| 4N32TVM |
Full Production |
RoHS Compliant |
$0.207 |
DIP-W |
6 |
BULK |
TBD |
| 4N32VM |
Full Production |
RoHS Compliant |
$0.207 |
DIP-W |
6 |
BULK |
TBD |
* Fairchild 1,000 piece Budgetary Pricing
|
| ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
DescriptionThe 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
Parameters: | Technical/Catalog Information | 4N32M |
| Vendor | Fairchild Optoelectronics Group |
| Category | Isolators |
| Voltage - Isolation | 7500Vrms |
| Input Type | DC |
| Output Type | Darlington with Base |
| Current - Output / Channel | 150mA |
| Voltage - Output | - |
| Vce Saturation (Max) | 1V |
| Current Transfer Ratio (Min) | 500% @ 10mA |
| Mounting Type | Through Hole |
| Package / Case | 6-DIP |
| Packaging | Tube |
| Number of Circuits | 1 - Single |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 4N32M
4N32M
|
4N32M Data Sheet
