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Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22, 4N23 and 4N24's can be tested to customer specifications, as well as to MIL-PRF-19500 JAN,JANS, JANTX and JANTXV quality levels.
4N23 Maximum Ratings
Input to Output Voltage............................................................................................. ±1kV Emitter-Collector Voltage.................................................................................................4V Collector-Emitter Voltage (VCEO, IF = 0).........................................................................35V Collector-Base Voltage (VCEO, IF = 0).............................................................................35V Reverse Input Voltage .....................................................................................................2V Input Diode Continuous Forward Current at (or below) 65 Free-Air Temperature (see note 1).......40mA Peak Forward Input Current (Value applies for tw 1s PRR < 300 pps)........................1A Continuous Collector Current.......................................................................................50mA Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2)......300mW Storage Temperature.................................................................... ...........-65°C to +125°C Operating Free-Air Temperature Range............................... ....................-55°C to +125°C Lead Solder Temperature (1/16" (1.6mm) from case for 10 seconds)........................240°C
4N23 Features
* Overall current gain...1.5 typical (4N24) * Base lead provided for conventional transistor biasing * Rugged package * High gain, high voltage transistor * +1kV electrical isolation
4N23 Typical Application
* Eliminate ground loops * Level shifting * Line receiver * Switching power supplies * Motor control
4N23A General Description
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22A, 4N23A and 4N24A can be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANS, JANTX, and JANTXV quality levels.
4N23A Maximum Ratings
Input to Output Voltage..............................................................................................±1kV Emitter-Collector Voltage.................................................................................................4V Collector-Emitter Voltage...............................................................................................35V Collector-Base Voltage...................................................................................................35V Reverse Input Voltage ....................................................................................................2V Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1)....40mA Peak Forward Input Current (Value applies for tw 1s, PRR < 300 pps).....................1A Continuous Collector Current.....................................................................................50mA Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2)...300mW Storage Temperature.............................................................................-65°C to +125°C Operating Free-Air Temperature Range.................................................-55°C to +125°C Lead Solder Temperature (1/16" (1.6mm) from case for 10 seconds)....................240°C
4N23A Features
* Collector is electrically isolated from the case. * Overall current gain...1.5 typical (4N24A) * Base lead provided for conventional transistor biasing * Rugged package * High gain, high voltage transistor * +1kV electrical isolation
4N23A Typical Application
* Eliminate ground loops * Level shifting * Line receiver * Switching power supplies * Motor control