3N59, 3N60, 3N61 Selling Leads, Datasheet
MFG:MOT Package Cooled:N/A D/C:4823
MFG:MOT Package Cooled:N/A D/C:4823
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Datasheet: 3N60
File Size: 192882 KB
Manufacturer: Unisonic Technologies
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 3N60
File Size: 192882 KB
Manufacturer: Unisonic Technologies
Download : Click here to Download
The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
PARAMETER |
SYMBOL |
RATINGS |
UNIT | |
Drain-Source Voltage | 3N60-A |
VDSS |
600 |
V |
3N60-B |
650 |
V | ||
Gate-Source Voltage |
VGSS |
±30 |
V | |
Avalanche Current - (Note 1) |
IAR |
3.0 |
A | |
Continuous Drain Current | TC = 25°C |
ID |
3.0 |
A |
TC = 100°C |
1.9 |
A | ||
Pulsed Drain Current, TP Limited by TJMAX - (Note 1) |
IDM |
12 |
A | |
Avalanche Energy, Single Pulsed (Note 2) |
EAS |
200 |
mJ | |
Avalanche Energy, Repetitive, Limited by TJMAX |
EAR |
7.5 |
mJ | |
Peak Diode Recovery dv/dt (Note 3) |
dv/dt |
4.5 |
V/ns | |
Power Dissipation |
PD |
75 |
W | |
Junction Temperature |
TJ |
+150 |
||
Storage Temperature |
TSTG |
-55 ~ +150 |