MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:05+
2N3702, 2N3702(D75Z), 2N3703 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: N/A
D/C: 05+
Description: TRANSISTOR GPA PNP 30V TO-92
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PDF/DataSheet Download
Datasheet: 2N3702
File Size: 30450 KB
Manufacturer: CENTRAL [Central Semiconductor Corp]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 2N3001
File Size: 22768 KB
Manufacturer: CENTRAL [Central Semiconductor Corp]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 2N3703
File Size: 28675 KB
Manufacturer: CENTRAL [Central Semiconductor Corp]
Download : Click here to Download
| Technical/Catalog Information | 2N3702 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Current - Collector (Ic) (Max) | 500mA |
| Power - Max | 625mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 50mA |
| Frequency - Transition | 100MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Through Hole |
| Package / Case | TO-92 |
| Packaging | Bulk |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 2N3702 2N3702 |
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics.
|
Symbol |
Parameter |
Value |
Units |
| VCEO | Collector-Emitter Voltage | 25 | V |
| VCBO | Collector-Base Voltage | 40 | V |
| VEBO | Emitter-Base Voltage | 5.0 | V |
| IC | Collector Current - Continuous | 500 | mA |
| TJ, Tstg | Operating and Storage Junction Temperature Range | -55 to +150 | °C |
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
| Technical/Catalog Information | 2N3703 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Current - Collector (Ic) (Max) | 500mA |
| Power - Max | 625mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 50mA |
| Frequency - Transition | 100MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Through Hole |
| Package / Case | TO-92 |
| Packaging | Bulk |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 2N3703 2N3703 |
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics.
|
Symbol |
Parameter |
Value |
Units |
| VCEO | Collector-Emitter Voltage | 30 | V |
| VCBO | Collector-Base Voltage | 50 | V |
| VEBO | Emitter-Base Voltage | 5.0 | V |
| IC | Collector Current - Continuous | 500 | mA |
| TJ, Tstg | Operating and Storage Junction Temperature Range | -55 to +150 | °C |
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
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