2N3020

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Maximum Operating Frequency : 100 MHz
Emitter- Base Voltage VEBO : 7 V
Collector- Emitter Voltage VCEO Max : 80 V
Packaging : Box
Maximum DC Collector Current : 1 A
Package / Case : TO-39
DC Collector/Base Gain hfe Min : 30 at 100 uA at 10 V


Specifications

DESCRIPTION	SYMBOL	VALUE	UNITS
Collector Emitter Voltage	VCEO	80	V
Collector Base Voltage	VCBO	140	V
Emitter Base Voltage	VEBO	7	V
Collector Current	ICM	1	A
Power Dissipation @ Ta=25º C	PD	800	mW
Power Dissipation@ Tc=25ºC		5	W
Junction Temperature	TI	+200	ºC
Storage Temperature	Tstg	-65 to +200	ºC
THERMAL RESISTANCE
Junction to Ambient	Rth(j-a)	218.7	ºC/W
Junction to Case	Rth(j-c)	35	ºC/W