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2N2221(A), 2N2221A, 2N2222

2N2221(A), 2N2221A, 2N2222 Selling Leads, Datasheet

MFG:STMicroelectronics  Category:Discrete Semiconductor Products  Package Cooled:900  D/C:N/A

2N2222 Picture

2N2221(A), 2N2221A, 2N2222 Datasheet download

Five Points

Part Number: 2N2222

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: 900

D/C: N/A

Description: TRANSISTOR NPN 30V .8A TO-18

 

 
 
 
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About 2N2000

PDF/DataSheet Download

Datasheet: 2N2000

File Size: 274221 KB

Manufacturer: ETC [ETC]

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  • 2N2221A

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  • AAA ELECTRONICE   China
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About 2N2221A

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Datasheet: 2N2221A

File Size: 302319 KB

Manufacturer: CENTRAL [Central Semiconductor Corp]

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  • 2N2222

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  • Abenic   China
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  • 2N2222

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About 2N2222

PDF/DataSheet Download

Datasheet: 2N2222

File Size: 308743 KB

Manufacturer: SEME-LAB [Seme LAB]

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2N2221A Parameters

Technical/Catalog Information2N2221A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)30V
Current - Collector (Ic) (Max)800mA
Power - Max500mW
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting Type-
Package / CaseTO-18
Packaging-
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names 2N2221A
2N2221A

2N2221A Maximum Ratings

Ratings Symbol All Types Unit
Collector-Emitter Voltage VCEO 20 Vdc
Emitter-Base Voltage VCBO 75 Vdc
Collector-Base VEBO 6.0 Vdc
Collector-Emitter IC 40 mAdc

Total Power Dissipation @ TA = +25
2N2221A, L; 2N2222A, L(1)
2N2221AUA; 2N2222AUA(2)
2N2221AUB; 2N2222AUB(1)

PT 0.5
0.65
0.50
W
Operating & Storage Junction Temperature Range Top, Tstg -65 to +200

2N2221A Connection Diagram

2N2222 Parameters

Technical/Catalog Information2N2222
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)30V
Current - Collector (Ic) (Max)800mA
Power - Max500mW
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Frequency - Transition250MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-18, Metal Case
PackagingTube
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2N2222
2N2222
497 3106 5 ND
49731065ND
497-3106-5

2N2222 General Description

Chip type 2C2222A by Semicoa Semiconductors provides performance similar to these devices.

2N2222 Maximum Ratings

Parameter Test conditions Min Max Uni
BVCEO IC = 10 mA, IB = 0 40 --- V dc
BVCBO IC = 10 A, IE = 0 75 --- V dc
BVEBO IE = 10 A, IC = 0 6.0 --- V dc
ICBO VCB = 50 V, IE = 0 --- 10 nA dc
hFE IC = 150 mA dc, VCE = 10 V 100 300 ---
Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less than 300 s, duty cycle less than 2%.

2N2222 Features

·Medium power ratings

2N2222 Typical Application

· Designed for general purpose switching and amplifier applications.

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