Features: Hermetically sealed TO-77 metal can Also available in chip configuration Chip geometry 0410 Reference document: MIL-PRF-19500/270ApplicationMatched, Dual TransistorsLow powerNPN silicon transistorSpecifications Parameter Symbol Rating Unit Collector-Emitter Voltage VCE...
2N2060: Features: Hermetically sealed TO-77 metal can Also available in chip configuration Chip geometry 0410 Reference document: MIL-PRF-19500/270ApplicationMatched, Dual TransistorsLow powerNPN silicon tr...
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Parameter | Symbol | Rating | Unit |
Collector-Emitter Voltage | VCEO | 60 | Volts |
Collector-Base Voltage V | VCBO | 100 | Volts |
Emitter-Base Voltage V | VEBO | 7 | Volts |
Collector Current, Continuous I | IC | 500 | mA |
Power Dissipation, TA= 25°C Derate linearly above 25°C |
PT | 540 one section 600 both sections 3.08 one section 3.48 both sections |
mW mW mW/°C mW/°C |
Power Dissipation, TC= 25°C Derate linearly above 25°C |
PT | 1.5 one section 2.12 both sections 8.6 one section 12.1 both sections |
W W mW/°C mW/°C |
Operating Junction Temperature |
TJ TSTG |
-65 to +200 | °C |