MFG:Infineon Technologies Category:Integrated Circuits (ICs) Package Cooled:SOP18 D/C:2005
2ED020I12-F, 2ED020I12-FI, 2ED300C17-S Datasheet download
Category: Integrated Circuits (ICs)
MFG: Infineon Technologies
Package Cooled: SOP18
D/C: 2005
Description: IC DRIVER IGBT 2-CHAN PDSO-18-1
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| Technical/Catalog Information | 2ED020I12-F |
| Vendor | Infineon Technologies |
| Category | Integrated Circuits (ICs) |
| Configuration | Half Bridge |
| Voltage - Supply | 14 V ~ 18 V |
| Current - Peak | 1A |
| Delay Time | 85ns |
| Package / Case | DSO-20 (18 Leads) |
| Packaging | Tape & Reel (TR) |
| Number of Outputs | 2 |
| Input Type | Non-Inverting |
| Number of Configurations | 1 |
| Operating Temperature | -40°C ~ 125°C |
| High Side Voltage - Max (Bootstrap) | 1200V |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 2ED020I12 F 2ED020I12F |
The 2ED020I12-F is a high voltage, high speed power IGBT and MOSFET driver of the eupec EiceDRIVER™ family with interlocking high and low side referenced output channels. The floating high side driver may be supplied directly or by means of a bootstrap diode and capacitor. In addition to the logic input of each driver the 2ED020I12-F is equipped with a dedicated shutdown input. All logic inputs are compatible with 3.3 V and 5 V TTL. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications.
Both drivers are designed to drive an n-channel power IGBT or MOSFET which operates up to 1200 V. In addition, a general purpose operational amplifier and a general purpose comparator are provided, which may be used e.g. for current measurement or over current detection.
| Parameter | Symbol | Limit values | Unit | Remark | |
| min. | max. | ||||
| High side ground | VGNDH | -1200 | 1200 | V | |
| High side supply voltage | VVSH | -0.3 | 20 | V | 1) |
| High side gate driver output | VOutH | -0.3 | VVSH + 0.3 | V | 1) |
| Low side ground | VGNDL | -0.3 | 5.3 | V | |
| Low side supply voltage | VVSL | -0.3 | 20 | V | 2) |
| Low side gate driver output | VOutL | -0.3 | VVSL + 0.3 | V | 3) |
| Logic input voltages (InH, InL, /SD) |
VIn | -0.3 | 5.3 | V | |
| OP input voltages (OP-, OP+) |
VOP | -0.3 | 5.3 | V | 4) |
| OP output voltage | VOPO | -0.3 | 5.3 | V | |
| CP input voltages (CP-, CP+) |
VCP | -0.3 | 5.3 | V | 4) |
| CP output voltage | V/CPO | -0.3 | 5.3 | V | |
| CP output max. sink current | I/CPO | - | 5 | mA | |
| High side ground, voltage transient | dVGNDH/dt | -50 | 50 | V/ns | |
| Package power dissipation @TA=25°C |
PD | - | 2 | W | 5) |
| Thermal resistance (both chips active), junction to ambient |
RTHJA | - | 60 | K/W | 6) |
| Thermal resistance (high side chip), junction to ambient |
RTHJA(HS) | - | 110 | K/W | 6) |
| Thermal resistance (low side chip), junction to ambient |
RTHJA(LS) | - | 110 | K/W | 6) |
| Junction temperature | TJ | - | 150 | ||
| Storage temperature | TS | -55 | 150 | ||
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