Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
Operating Temperature:..................... -65 to +175 Storage Temperature:........................ -65 to +200 Surge Current A, sine 8.3mS: ...............................1.0A Surge Current B, square 8.3mS:...................... 0.704A Total Power Dissipation: ..................................500mW Operating Current: ...........................75mA, TA= +25 Derating Factor: ................0.5mA/ above TA= +25 D.C. Reverse Voltage (VRWM):.............................. 75V
1N914 Typical Application
1N914 Datasheet
1N914A Parameters
Technical/Catalog Information
1N914A
Vendor
Fairchild Optoelectronics Group
Category
Discrete Semiconductor Products
Diode Type
Standard
Voltage - DC Reverse (Vr) (Max)
100V
Current - Average Rectified (Io)
200mA
Voltage - Forward (Vf) (Max) @ If
1V @ 20mA
Reverse Recovery Time (trr)
4ns
Current - Reverse Leakage @ Vr
5A @ 75V
Speed
Small Signal =< 200mA (Io), Any Speed
Mounting Type
Through Hole, Axial
Package / Case
DO-35, Axial
Packaging
Bulk
Capacitance @ Vr, F
4pF @ 0V, 1MHz
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
1N914A 1N914A
1N914A General Description
High Conductance Fast Diode
1N914A Maximum Ratings
Symbol
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage
100
V
IF(AV)
Average Rectified Forward Current
200
mA
IFSM
Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond
1.0 4.0
A A
Tstg
Storage Temperature Range
-65 to +200
°C
TJ
Operating Junction Temperature
175
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
1N914A Typical Application
1N914A Datasheet
1N914B Parameters
Technical/Catalog Information
1N914B
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Diode Type
Standard
Voltage - DC Reverse (Vr) (Max)
100V
Current - Average Rectified (Io)
200mA
Voltage - Forward (Vf) (Max) @ If
720mV @ 5mA
Reverse Recovery Time (trr)
4ns
Current - Reverse Leakage @ Vr
5A @ 75V
Speed
Small Signal =< 200mA (Io), Any Speed
Mounting Type
Through Hole, Axial
Package / Case
DO-35, Axial
Packaging
Bulk
Capacitance @ Vr, F
4pF @ 0V, 1MHz
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
1N914B 1N914B
1N914B General Description
High Conductance Fast Diode
1N914B Maximum Ratings
Symbol
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage
100
V
IF(AV)
Average Rectified Forward Current
200
mA
IFSM
Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond
1.0 4.0
A A
Tstg
Storage Temperature Range
-65 to +200
°C
TJ
Operating Junction Temperature
175
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
