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mPC8179TB

Features: • Low current consumption : ICC = 4.0 mA TYP. @ VCC = 3.0 V• Supply voltage : VCC = 2.4 to 3.3 V• High efficiency : PO (1 dB) = +3.0 dBm TYP. @ f = 1.0 GHz PO (1 dB) = +1.5 dBm TYP. @ f = 1.9 GHz PO (1 dB) = +1.0 dBm TYP. @ f = 2.4 GHz• Power gain : GP = 13.5 dB T...

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SeekIC No. : 004426090 Detail

mPC8179TB: Features: • Low current consumption : ICC = 4.0 mA TYP. @ VCC = 3.0 V• Supply voltage : VCC = 2.4 to 3.3 V• High efficiency : PO (1 dB) = +3.0 dBm TYP. @ f = 1.0 GHz PO (1 dB) = +1...

mPC8179TB Data Sheet

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Part Number:
mPC8179TB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low current consumption : ICC = 4.0 mA TYP. @ VCC = 3.0 V
• Supply voltage : VCC = 2.4 to 3.3 V
• High efficiency : PO (1 dB) = +3.0 dBm TYP. @ f = 1.0 GHz PO (1 dB) = +1.5 dBm TYP. @ f = 1.9 GHz PO (1 dB) = +1.0 dBm TYP. @ f = 2.4 GHz
• Power gain : GP = 13.5 dB TYP. @ f = 1.0 GHz GP = 15.5 dB TYP. @ f = 1.9 GHz GP = 15.5 dB TYP. @ f = 2.4 GHz
• Excellent isolation : ISL = 44 dB TYP. @ f = 1.0 GHz ISL = 42 dB TYP. @ f = 1.9 GHz ISL = 41 dB TYP. @ f = 2.4 GHz
• Operating frequency : 0.1 to 2.4 GHz (Output port LC matching)
• High-density surface mounting : 6-pin super minimold package (2.0X 1.25X0.9 mm)
• Light weight : 7 mg (Standard value)




Application

• Buffer amplifiers on 0.1 to 2.4 GHz mobile communications system


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Conditions
Ratings
Unit
Supply Voltage
VCC
TA = +25 , Pin 4, Pin 6
3.6
V
Circuit Current
ICC
TA = +25
15
mA
Power Dissipation
PD
Mounted on double sided copper clad 50 ´ 50 ´ 1.6
mm epoxy glass PWB (TA = +85 )
270
mW
Operating Ambient Temperature
TA
-40 to +85
Storage Temperature
Tstg
-55 to +150
Input Power
Pin
TA = +25
+5
dBm



Description

The mPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This mPC8179TB can realize low current consumption with external chip inductor which can not be realized on internal 50 wideband matched IC. This low current amplifier operates on 3.0 V.

This mPC8179TB is manufactured using NEC's 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/migration. Thus, mPC8179TB has excellent performance, uniformity and reliability.




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