mPC8158K

Features: • Supply voltage: VCC = 2.7 to 4.0 V, ICC = 28 mA @ VCC = 3.0 V• Built-in LPF suppresses spurious multipled by TX local (LO1)• AGC amplifier is installed in local port of up converter: GCR = 35 dB MIN. @ fout = 1.5 GHz• Excellent performance: Padj = 65 dBc TYP. @ ...

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SeekIC No. : 004426089 Detail

mPC8158K: Features: • Supply voltage: VCC = 2.7 to 4.0 V, ICC = 28 mA @ VCC = 3.0 V• Built-in LPF suppresses spurious multipled by TX local (LO1)• AGC amplifier is installed in local port of...

floor Price/Ceiling Price

Part Number:
mPC8158K
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Supply voltage: VCC = 2.7 to 4.0 V, ICC = 28 mA @ VCC = 3.0 V
• Built-in LPF suppresses spurious multipled by TX local (LO1)
• AGC amplifier is installed in local port of up converter: GCR = 35 dB MIN. @ fout = 1.5 GHz
• Excellent performance: Padj = 65 dBc TYP. @ f = ±50 kHz, EVM = 1.2 % rms TYP.
• External IF filter can be applied between modulator output and up converter input terminal.



Application

• Digital cellular phones (PDC800M, PDC1.5G and so on)


Pinout

  Connection Diagram


Specifications

Parameter

Symbol Conditions Rating Unit
Supply Voltage VCC Pin11, 20 and 25,
TA = +25°C
5.0 V
Power Save and AGC Control Pin
Applied Voltage
VPS/VAGC Pin17, TA = +25°C 5.0 V
Power Dissipation PD TA = +85°CNote 430 mW
Operating Ambient Temperature TA   40 to +85
Storage Temperature Tstg   55 to +150



Description

The mPC8158K is a silicon microwave monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This MMIC consists of 0.8 GHz to 1.5 GHz up-converter and 100 MHz to 300 MHz quadrature modulator which are equipped with AGC and power save functions. This configuration suits to IF modulation system. The package is 28-pin QFN suitable for high density mounting. The mPC8158K is manufactured using NEC's. 20 GHz fT silicon bipolar process NESATTM III to realize low power consumption. Consequently the mPC8158K can contribute to make RF blocks smaller size, higher performance and lower power consumption.




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