Features: • Recommended operating frequency: f = 800 MHz to 1.5 GHz• Low distortion : Padj £ 60 dBc MAX. @Pin = 15 dBm, Df = ±50 kHz, VCC = 3.0 V, TA = +25 °C• Supply voltage : VCC = 2.7 to 3.3 V• Low current consumption : ICC = 11 mA TYP. @VCC = 3.0 V• Gain con...
mPC8131TA: Features: • Recommended operating frequency: f = 800 MHz to 1.5 GHz• Low distortion : Padj £ 60 dBc MAX. @Pin = 15 dBm, Df = ±50 kHz, VCC = 3.0 V, TA = +25 °C• Supply voltage...
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Parameter | Symbol | Conditions | Ratings | Unit |
Parameter | VCC | TA = +25 °C, Pin 4 and 5 | 3.6 | V |
Total Circuit Current | ICC | TA = +25 °C, Pin 4 and 5 | 30 | mA |
Input Power | Pin | TA = +25 °C | +10 | dBm |
Gain Control Voltage | VAGC | TA = +25 °C | 3.6 | V |
Operating Ambient Temperature | TA | 25 to +85 | °C | |
Storage Temperature | Tstg | 55 to +150 | °C |
The mPC8130TA and mPC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 800 MHz to 1.5 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. mPC8130TA and mPC8131TA are lower distortion than conventional mPC8119T and mPC8120T so that 15 dBm input level can be applied. mPC8130TA and mPC8131TA also available in two types of gain control so you can choose either IC in accordance with your system design. 3 V supply voltage and minimold package contribute to make your system lower voltage, decreased space and fewer components.
The mPC8130TA and mPC8131TA are manufactured using NEC's 20 GHz fT NESAT™III silicon bipolar process.
This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, mPC8130TA and mPC8131TA have excellent performance, uniformity and reliability.