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mPC8130TA

Features: • Recommended operating frequency: f = 800 MHz to 1.5 GHz• Low distortion : Padj £ 60 dBc MAX. @Pin = 15 dBm, Df = ±50 kHz, VCC = 3.0 V, TA = +25 °C• Supply voltage : VCC = 2.7 to 3.3 V• Low current consumption : ICC = 11 mA TYP. @VCC = 3.0 V• Gain con...

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mPC8130TA: Features: • Recommended operating frequency: f = 800 MHz to 1.5 GHz• Low distortion : Padj £ 60 dBc MAX. @Pin = 15 dBm, Df = ±50 kHz, VCC = 3.0 V, TA = +25 °C• Supply voltage...

mPC8130TA Data Sheet

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Part Number:
mPC8130TA
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Recommended operating frequency: f = 800 MHz to 1.5 GHz
• Low distortion : Padj £ 60 dBc MAX. @Pin = 15 dBm, Df = ±50 kHz, VCC = 3.0 V, TA = +25 °C
• Supply voltage : VCC = 2.7 to 3.3 V
• Low current consumption : ICC = 11 mA TYP. @VCC = 3.0 V
• Gain control voltage : VAGC = 0 to 2.4 V (recommended)
• Two types of gain control : mPC8130TA = VAGC up vs. Gain up (Reverse control) mPC8131TA = VAGC up vs. Gain down (Forward control)
• AGC control can be constructed by external control circuit.
• High-density surface mounting : 6 pin minimold package


Application

• 800 MHz to 900 MHz or 1.5 GHz Digital cellular telephone (PDC800M, PDC1.5G and so on)


Pinout

Connection Diagram


Specifications

Parameter Symbol Conditions Ratings Unit
Parameter VCC TA = +25 °C, Pin 4 and 5 3.6 V
Total Circuit Current ICC TA = +25 °C, Pin 4 and 5 30 mA
Input Power Pin TA = +25 °C +10 dBm
Gain Control Voltage VAGC TA = +25 °C 3.6 V
Operating Ambient Temperature TA   25 to +85 °C
Storage Temperature Tstg   55 to +150 °C



Description

The mPC8130TA and mPC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 800 MHz to 1.5 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. mPC8130TA and mPC8131TA are lower distortion than conventional mPC8119T and mPC8120T so that 15 dBm input level can be applied. mPC8130TA and mPC8131TA also available in two types of gain control so you can choose either IC in accordance with your system design. 3 V supply voltage and minimold package contribute to make your system lower voltage, decreased space and fewer components.

The mPC8130TA and mPC8131TA are manufactured using NEC's 20 GHz fT NESAT™III silicon bipolar process.

This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, mPC8130TA and mPC8131TA have excellent performance, uniformity and reliability.




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