mPA1703

Drain to Source Voltage                                   V_DSS                 30 V
Gate to Source Voltage                                    V_GSS                  ±20 V
Drain Current (DC)                                             I_D(DC)              ±10 A
Drain Current (pulse)^Notes1                               I_D(pulse)            ±40 A
Total Power Dissipation (T_A = 25 °C)^Notes2       P_T                     2.0 W
Channel Temperature                                         T_ch                   150 °C
Storage Temperature                                         T_stg                  -55 to+150 °C
Notes 1. PW 10 s, Duty Cycle 1 %
2. Mounted on ceramic substrate of 1200 mm²X 0.7 mm
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device acutally used, an addtional protection circuit is externally required if voltage exceeding the rated voltage may be applied to this device.

mPA1703 is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers.