mPA103

Features:

• FIVE MONOLITHIC 9 GHz fT TRANSISTORS:Two of these use a common emitter pin and can be used as differential amplifiers
• OUTSTANDING hFE LINEARITY
• TWO PACKAGE OPTIONS:
mPA103B: Superior thermal dissipation due to studded ceramic package
mPA103G: Reduced circuit size due to 14-pin plastic SOP package for surface mounting


Pinout




Specifications

Parameter	Rating	SYMBOL	UNIT
Collector-base voltage	15	VCBO	V
Collector to Emitter Voltage	6	VCEO	V
Emitter to Base Voltage	2.5	IC	V
Collector Current	40	P	mW
Power Dissipation mPA103B mPA103G	650 350	Tj	mW mW
Junction Temperature mPA103B mPA103G	200 125	Tstg	°C °C
Storage Temperature mPA103B mPA103G	55 to +200 55 to +125	TSTG	°C °C

Description

The mPA103 is a user configurable Silicon bipolar transistor array consisting of a common emitter pair and three individual bipolar transistors. It is available in a surface mount 14-pin plastic SOP package and a 14-pin ceramic package. mPA103 applications include: differential amplifiers and oscillators, high speed comparators, advanced cellular phone systems, electro-optic and other signal processing up to 1.5 gigabits/second.