bq4024Y

Features: ä Data retention in the absence of powerä Automatic write-protection during power-up/power-down cyclesä Industry-standard 40-pin 128K x 16 pinoutä Conventional SRAM operation; unlimited write cyclesä 10-year minimum data retention in absence of powerä Batter...

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bq4024Y Picture
SeekIC No. : 004301324 Detail

bq4024Y: Features: ä Data retention in the absence of powerä Automatic write-protection during power-up/power-down cyclesä Industry-standard 40-pin 128K x 16 pinoutä Conventional SRAM ope...

floor Price/Ceiling Price

Part Number:
bq4024Y
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/22

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Product Details

Description



Features:

ä Data retention in the absence of power
ä Automatic write-protection during power-up/power-down cycles
ä Industry-standard 40-pin 128K x 16 pinout
ä Conventional SRAM operation; unlimited write cycles
ä 10-year minimum data retention in absence of power
ä Battery internally isolated until power is applied



Pinout

  Connection Diagram


Specifications

Symbol Parameter Value Unit Conditions
VCC DC voltage applied on VCC relative to VSS -0.3 to 7.0 V  
VT DC voltage applied on any pin excluding VCC
relative to VSS
-0.3 to 7.0 V VT VCC + 0.3
TOPR Operating temperature 0 to +70 °C  
TSTG Storage temperature -40 to +70 °C  
TBIAS Temperature under bias -10 to +70 °C  
TSOLDER Soldering temperature +260 °C For 10 seconds



Description

The CMOS bq4024 is a nonvolatile 2,097,152-bit static RAM organized as 131,072 words by 16 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM.

The control of bq4024Y circuitry constantly monitors the single 5V supply for an out-of-tolerance condition. When VCC falls out of tolerance, the SRAM is unconditionally writeprotected to prevent an inadvertent write operation.

At this time the integral energy source of bq4024Y is switched on to sustain the memory until after VCC returns valid. The bq4024 uses extremely low standby current CMOS SRAMs, coupled with small lithium coin cells to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EEPROM. The bq4024 requires no external circuitry and is compatible with the industry-standard 2Mb SRAM pinout.




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