bq4010

Features: Data retention in the absence of power Automatic write-protection during power-up/power-down cycles Industry-standard 28-pin 8K x 8 pinout Conventional SRAM operation;unlimited write cycles 10-year minimum data retention in absence of power Battery internally isolated until power is appl...

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SeekIC No. : 004301308 Detail

bq4010: Features: Data retention in the absence of power Automatic write-protection during power-up/power-down cycles Industry-standard 28-pin 8K x 8 pinout Conventional SRAM operation;unlimited write cycle...

floor Price/Ceiling Price

Part Number:
bq4010
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Description



Features:

Data retention in the absence of power
Automatic write-protection during power-up/power-down cycles
Industry-standard 28-pin 8K x 8 pinout
Conventional SRAM operation;unlimited write cycles
10-year minimum data retention in absence of power
Battery internally isolated until power is applied



Pinout

  Connection Diagram


Specifications

Symbol Parameter Value Unit Conditions
VCC DC voltage applied on VCC relative to VSS -0.3 to 7.0 V
VT DC voltage applied on any pin excluding VCC
relative to VSS
-0.3 to 7.0 V VT VCC + 0.3
TOPR Operatingtemperature 0 to +70 °C Commercial
-40to+85   Extended "N"
TSTG Storage temperature -40 to +70 °C Commercial
-40to+85 °C Extended "N"
TBIAS Temperature under bias -10 to +70 °C Commercial
-40to+85 °C Extended "N"
TSOLDER Soldering temperature 260 °C For 10 seconds



Description

The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM.


The control circuitry constantly monitors the single 5V supply for an out-of-tolerance condition. When VCC falls out of tolerance, the SRAM is unconditionally write-protected to prevent inadvertent write operation.


At this time the integral energy source of bq4010 is switched on to sustain the memory until after VCC returns valid.


The bq4010 uses an extremely low standby current CMOS SRAM,coupled with a small lithium coin cell to provide nonvolatility without long write-cycle times and the writecycle limitations associated with EEPROM.


The bq4010 requires no external circuitry and is socket-compatible with industry-standard SRAMs and most EPROMs and EEPROMs.




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