Features: *Data retention in the absence of power*Automatic write-protection duringpower-up/power-downcycles*Conventional SRAM operation;unlimitedwritecycles*5-year minimum data retention inabsenceofpower*Battery internally isolated until powerisappliedPinoutSpecifications Symbol Parameter ...
bq4017: Features: *Data retention in the absence of power*Automatic write-protection duringpower-up/power-downcycles*Conventional SRAM operation;unlimitedwritecycles*5-year minimum data retention inabsenceo...
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Symbol | Parameter | Value | Unit | Conditions |
VCC | DC voltage applied on VCC relative to VSS | -0.3 to 7.0 | V | |
VT | DC voltage applied on any pin excluding VCC relative to VSS | -0.3 to 7.0 | V | VT VCC + 0.3 |
TOPR | Operatingtemperature | 0 to +70 | °C | |
TSTG | Storage temperature | -40 to +70 | °C | |
TBIAS | Temperature under bias | -10 to +70 | °C | |
TSOLDER | Soldering temperature | +260 | °C | For 10 seconds |
The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM.
The control circuitry constantly of bq4017 monitors the single 5V supply for an out-of-tolerance condition. When VCC falls out of tolerance, the SRAM is unconditionally write-protected to prevent an inadvertent write operation.
At this time the integral energy source of bq4017 is switched on to sustain the memoryuntilafterVCC returnsvalid.
The bq4017 uses extremely low standby current CMOS SRAMs, coupled with small lithium coin cells to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EE-PROM.
The bq4017 has the same interface as industry-standard SRAMs and requiresnoexternalcircuitry.