bq4016Y

Features:

Data retention in the absence of power
Automatic write-protection during power-up/power-down cycles
Conventional SRAM operation;unlimited write cycles
10-year minimum data retention in absence of power
Battery internally isolated until power is applied


Pinout




Specifications

Symbol	Parameter	Value	Unit	Conditions
VCC	DC voltage applied on VCC relative to VSS	-0.3 to 7.0	V
VT	DC voltage applied on any pin excluding VCC relative to VSS	-0.3 to 7.0	V	VT VCC + 0.3
TOPR	Operatingtemperature	0 to +70	°C
TSTG	Storage temperature	-40 to +70	°C
TBIAS	Temperature under bias	10 to +70	°C
TSOLDER	Soldering temperature	260	°C	For 10 seconds

Description

The CMOS bq4016 is a nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited
write cycles of standard SRAM.


The control circuitry of bq4016Y constantly monitors the single 5V supply for an out-of-tolerance condition. When V_CC  falls out of tolerance, the SRAM is unconditionally write-protected to prevent an inadvertent write operation. 


At this time the integral energy source of bq4016Y is switched on to sustain the memory until after V_CC returns valid.


The bq4016 uses extremely low standby current CMOS SRAMs,coupled with a small lithium coin cell to provide nonvolatility without long write-cycle times and the writecycle limitations associated with EEPROM.


The bq4016 has the same interface as industry-standard SRAMs and requires no external circuitry.