Features: Data retention for at least 10 yearswithoutpowerAutomatic write-protection during power-up/power-downcyclesConventional SRAM operation,includingunlimitedwritecyclesInternal isolation of battery be fore powerapplicationIndustry standard 32-pin DIP pinout34-pin LIFETIME LITHIUM(TM)module -...
bq4015Y: Features: Data retention for at least 10 yearswithoutpowerAutomatic write-protection during power-up/power-downcyclesConventional SRAM operation,includingunlimitedwritecyclesInternal isolation of ba...
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Symbol | Parameter | Value | Unit | Conditions |
VCC | DC voltage applied on VCC relative to VSS | -0.3 to 7.0 | V | |
VT | DC voltage applied on any pin excluding VCC relative to VSS |
-0.3 to 7.0 | V | VT VCC + 0.3 |
TOPR | Operatingtemperature | 0 to +70 | °C | Commercial |
-40 to +85 | Extended "N" | |||
TSTG | Storage temperature | -40 to +70 | °C | Commercial |
-40 to +85 | °C | Extended "N" | ||
TBIAS | Temperature under bias | -10 to +70 | °C | Commercial |
-40 to +85 | °C | Extended "N" | ||
TSOLDER | Soldering temperature | +260 | °C | For 10 seconds |
The CMOS bq4015/Y is a nonvolatile 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of tandard SRAM.
The control circuitry of bq4015Y constantly monitors the single 5V supply for an out-of-tolerance condition. When VCC falls out of tolerance, the SRAM is unconditionally write-protected to prevent an inadvertent write operation.
At this time the integral energy source of bq4015Y is switched on to sustain the memory until after VCC returns valid.
The bq4015/Y uses extremely low standby current CMOS SRAMs, coupled with small lithium coin cells to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EE-PROM.
The bq4015/Y requires no external circuitry and is compatible with the industry-standard 4Mb SRAM pinout.