Features: Data retention in the absence of power Automatic write-protection during power-up/power-down cycles Industry-standard 32-pin 256K x 8 pinout Conventional SRAM operation;unlimited write cycles 10-year minimum data retention in absence of power Battery internally isolated until power is ap...
bq4014Y: Features: Data retention in the absence of power Automatic write-protection during power-up/power-down cycles Industry-standard 32-pin 256K x 8 pinout Conventional SRAM operation;unlimited write cyc...
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Symbol | Parameter | Value | Unit | Conditions |
VCC | DC voltage applied on VCC relative to VSS | -0.3 to 7.0 | V | |
VT | DC voltage applied on any pin excluding VCC relative to VSS | -0.3 to 7.0 | V | VT VCC + 0.3 |
TOPR | Operatingtemperature | 0 to +70 | °C | |
TSTG | Storage temperature | -40 to +70 | °C | |
TBIAS | Temperature under bias | -10 to +70 | °C | |
TSOLDER | Soldering temperature | +260 | °C | For 10 seconds |
The CMOS bq4014 is a nonvolatile 2,097,152-bit static RAM organized as 262,144 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM.
The control circuitry of bq4014Y constantly monitors the single 5V supply for an out-of-tolerance condition. When VCC falls out of tolerance, the SRAM is unconditionally write-protected to prevent inadvertent write operation. At this time the integral energysource is switched on to sustain the memory until after VCC returns valid.
The bq4014 uses extremely low standby current CMOS SRAMs, coupled with small lithium coin cells to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EEPROM.
The bq4014 requires no external circuitry and is compatible with the industry-standard 2Mb SRAM pinout.