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mPC8109TB

Features: • Recommended operating frequency : fRFout = 0.4 GHz to 2.0 GHz, fIFin = 100 MHz to 400 MHz• Supply voltage : VCC = 2.7 to 5.5 V• High-density surface mounting : 6-pin super minimold package• Low current consumption : ICC = 9 mA TYP. @ mPC8106TB ICC = 5 mA TYP. @ ...

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mPC8109TB: Features: • Recommended operating frequency : fRFout = 0.4 GHz to 2.0 GHz, fIFin = 100 MHz to 400 MHz• Supply voltage : VCC = 2.7 to 5.5 V• High-density surface mounting : 6-pin su...

mPC8109TB Data Sheet

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Part Number:
mPC8109TB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Features:

• Recommended operating frequency : fRFout = 0.4 GHz to 2.0 GHz, fIFin = 100 MHz to 400 MHz
• Supply voltage : VCC = 2.7 to 5.5 V
• High-density surface mounting : 6-pin super minimold package
• Low current consumption : ICC = 9 mA TYP. @ mPC8106TB ICC = 5 mA TYP. @ mPC8109TB
• Minimized carrier leakage : Due to double balanced mixer
• Built-in power save function


Application

• Cellular/cordless telephone up to 2.0 GHz MAX (example: PHS, PDC, DCS1800 and so on)


Specifications

Parameter Symbol Test Conditions Rating Unit
Supply Votage VCC TA = +25 , Pin 5 and 6 6.0 V
PS pin Input Voltage VPS TA = +25 6.0 V
Power Dissipation of
Package		 PD Mounted on double-sided copper-clad 50 ´ 50 ´
1.6 mm epoxy glass PWB
TA = +85 		200 mW
Operating Ambient Temperature TA   -40 to +85
Storage Temperature Tstg   -55 to +150
Maximum Input Power Pin   +10 dBm



Description

The mPC8106TB and mPC8109TB are silicon monolithic integrated circuit designed as frequency up-converter for cellular/cordless telephone transmitter stage. The mPC8106TB features improved intermodulation and mPC8109TB features low current consumption. From these two version, you can chose either IC corresponding to your system design. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute to reduce your system size.

The mPC8106TB and mPC8109TB are manufactured using NEC's 20 GHz fT NESATTMIII silicon bipolar process. This process uses a silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, mPC8106TB and mPC8109TB have excellent performance, uniformity and reliability.




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