Features: ·Access time : 70, 85 and 100ns ·High-density design : 16Mbyte Design ·Battery internally isolated until power is applied ·Unlimited write cycles ·Data retention in the absence of VCC·10-years minimum data retention in absence of power ·Automatic write-protection during power-up/power-do...
HMNP16MM: Features: ·Access time : 70, 85 and 100ns ·High-density design : 16Mbyte Design ·Battery internally isolated until power is applied ·Unlimited write cycles ·Data retention in the absence of VCC·10-y...
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PARAMETER |
SYMBOL |
RATING |
UNIT |
REMARK |
Voltage on any pin relative to Vss |
Vin,VCC |
-0.5 to 7.0 |
V |
|
Voltage on Vcc supply relative to Vss |
Vcc |
-0.5 to 7.0 |
V |
|
Power Dissipation |
Pd |
32 |
W |
|
Storage temperature |
TSTG |
-65 to 150 |
|
|
Operating Temperature |
Ta |
0 to 70 |
|
K6T4016C3C-B |
-40 to 85 |
|
K6T4016C3C-F |
The HMNP16MM Nonvolatile SRAM is a 16,777,216-byte static RAM organized as 8,388,608 words by 16 bits. The P16MM has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write cycles of dard SRAM and integral control circuitry which constantly monitors the single 5V supply for an out-of-tolerance condition. hen such a condition occurs, the lithium energy source is automatically switched on to sustain the memory until after V CC s valid and write protection is unconditionally enabled to prevent garbled data.
In addition the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the egral energy source is switched on to sustain the memory until after V CC returns valid. The HMNP16MM uses extremely low standby current CMOS SRAM°s, coupled with small lithium coin cells to provide non-volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.