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PPC8152TA

Features: • Low current consumption : PPC8128TA ; ICC = 2.8 mA TYP. @ VCC = 3.0 V:PPC8151TA ; ICC = 4.2 mA TYP. @ VCC = 3.0 V:LPPC8152TA ; ICC = 5.6 mA TYP. @ VCC = 3.0 V• Supply voltage : VCC = 2.4 to 3.3 V• High efficiency : PPC8128TA ; PO (1 dB) = ð4.0 dBm TYP. @ f = 1 GHz...

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PPC8152TA: Features: • Low current consumption : PPC8128TA ; ICC = 2.8 mA TYP. @ VCC = 3.0 V:PPC8151TA ; ICC = 4.2 mA TYP. @ VCC = 3.0 V:LPPC8152TA ; ICC = 5.6 mA TYP. @ VCC = 3.0 V• Supply voltage...

PPC8152TA Data Sheet

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Part Number:
PPC8152TA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low current consumption : PPC8128TA ; ICC = 2.8 mA TYP. @ VCC = 3.0 V
:PPC8151TA ; ICC = 4.2 mA TYP. @ VCC = 3.0 V
:LPPC8152TA ; ICC = 5.6 mA TYP. @ VCC = 3.0 V
• Supply voltage : VCC = 2.4 to 3.3 V
• High efficiency : PPC8128TA ; PO (1 dB) = ð4.0 dBm TYP. @ f = 1 GHz
:PPC8151TA ; PO (1 dB) = +2.5 dBm TYP. @ f = 1 GHz
:PPC8152TA ; PO (1 dB) = ð4.5 dBm TYP. @ f = 1 GHz
• Power gain variation : PPC8128TA, 8151TA ; GP = 12.5 dB TYP. @ f = 1 GHz PPC8152TA ; GP = 23.0 dB TYP. @ f = 1 GHz
• Operating frequency : 100 to 1 900 MHz (Output port LC matching)
• Excellent isolation : PPC8128TA ; ISL = 39 dB TYP. @ f = 1 GHz
: PPC8151TA ; ISL = 38 dB TYP. @ f = 1 GHz
: PPC8152TA ; ISL = 40 dB TYP. @ f = 1 GHz


Application

• Buffer Amplifiers on 800 to 1 900 MHz cellular / cordless telephones


Pinout

Connection Diagram


Specifications

Parameter Symbol Conditions Ratings Unit
Supply Voltage VCC TA = +25 °C, Pin 4, Pin 6 3.6 V
Total Circuit Current ICC TA = +25 °C 15 mA
Total Power Dissipation PD Mounted on double sided copper clad 50 u 50 u 1.6
mm epoxy glass PWB (TA = +85 °C)		 280 mW
Operating Ambient Temperature TA   -40 to +85 °C
Storage Temperature Tstg   -55 to +150 °C
Input Power Pin TA = +25 °C +5 dBm



Description

The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip inductor (example: 1005 size) which can not be realized on internal 50 : wideband matched IC. These low current amplifiers operate on 3.0 V.

These ICs PPC8128TA, PPC8151TA and PPC8152TA are manufactured using NEC's 20 GHz fT NESAT™ III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, these ICs have excellent performance, uniformity and reliability.




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