Features: • Low current consumption : PPC8128TA ; ICC = 2.8 mA TYP. @ VCC = 3.0 V:PPC8151TA ; ICC = 4.2 mA TYP. @ VCC = 3.0 V:LPPC8152TA ; ICC = 5.6 mA TYP. @ VCC = 3.0 V• Supply voltage : VCC = 2.4 to 3.3 V• High efficiency : PPC8128TA ; PO (1 dB) = ð4.0 dBm TYP. @ f = 1 GHz...
PPC8151TA: Features: • Low current consumption : PPC8128TA ; ICC = 2.8 mA TYP. @ VCC = 3.0 V:PPC8151TA ; ICC = 4.2 mA TYP. @ VCC = 3.0 V:LPPC8152TA ; ICC = 5.6 mA TYP. @ VCC = 3.0 V• Supply voltage...
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Parameter | Symbol | Conditions | Ratings | Unit |
Supply Voltage | VCC | TA = +25 °C, Pin 4, Pin 6 | 3.6 | V |
Total Circuit Current | ICC | TA = +25 °C | 15 | mA |
Total Power Dissipation | PD | Mounted on double sided copper clad 50 u 50 u 1.6 mm epoxy glass PWB (TA = +85 °C) |
280 | mW |
Operating Ambient Temperature | TA | -40 to +85 | °C | |
Storage Temperature | Tstg | -55 to +150 | °C | |
Input Power | Pin | TA = +25 °C | +5 | dBm |
The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip inductor (example: 1005 size) which can not be realized on internal 50 : wideband matched IC. These low current amplifiers operate on 3.0 V.
These ICs PPC8128TA, PPC8151TA and PPC8152TA are manufactured using NEC's 20 GHz fT NESAT™ III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, these ICs have excellent performance, uniformity and reliability.