Features: Voltage Supply : 2.7V ~ 5.5VOrganization - Memory Cell Array : (4M + 128K)bit x 8bit - Data Register : (512 + 16)bit x8bitAutomatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (8K + 256)Byte - Status Register528-Byte Page Read Operation - Random Access : 10s(Max.) -...
K9F3208W0A-TIB0: Features: Voltage Supply : 2.7V ~ 5.5VOrganization - Memory Cell Array : (4M + 128K)bit x 8bit - Data Register : (512 + 16)bit x8bitAutomatic Program and Erase - Page Program : (512 + 16)Byte - Bloc...
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Features: Voltage Supply : 2.7V ~ 5.5VOrganization - Memory Cell Array : (4M + 128K)bit x 8bit - D...
Parameter | Symbol | Rating | Unit | |
Voltage on any pin relative to VSS | VIN | -0.6 to +7.0 | V | |
Temperature Under Bias | K9F3208W0A-TCB0 | TBIAS | -10 to +125 | |
K9F3208W0A-TIB0 | -40 to +125 | |||
Storage Temperature | TSTG | -65 to +150 |
The K9F3208W0A-TIB0 is a 4M(4,194,304)x8bit NAND Flash Mem-ory with a spare 128K(131,072)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typical 250s and an erase operation can be performed in typi-cal 2ms on an 8K-byte block.
Data in the page of K9F3208W0A-TIB0 can be read out at 50ns cycle time per byte.The I/O pins serve as the ports for address and data input/out-put as well as command inputs. The on-chip write controller automates all program and erase system functions, including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F3208W0A extended reliability of 1,000,000 program/erase cycles by providing ECC(Error Cor-rection Code) with real time mapping-out algorithm. The K9F3208W0A-TIB0 is an optimum solution for large nonvolatile stor-age application such as solid state storage, digital voice recorder, digital still camera and other portable applications requiring nonvolatility.