K9F3208W0A-TCB0

Features: Voltage Supply : 2.7V ~ 5.5VOrganization - Memory Cell Array : (4M + 128K)bit x 8bit - Data Register : (512 + 16)bit x8bitAutomatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (8K + 256)Byte - Status Register528-Byte Page Read Operation - Random Access : 10s(Max.) -...

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SeekIC No. : 004383435 Detail

K9F3208W0A-TCB0: Features: Voltage Supply : 2.7V ~ 5.5VOrganization - Memory Cell Array : (4M + 128K)bit x 8bit - Data Register : (512 + 16)bit x8bitAutomatic Program and Erase - Page Program : (512 + 16)Byte - Bloc...

floor Price/Ceiling Price

Part Number:
K9F3208W0A-TCB0
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

 Voltage Supply : 2.7V ~ 5.5V
 Organization
  - Memory Cell Array : (4M + 128K)bit x 8bit
  - Data Register         : (512 + 16)bit x8bit

 Automatic Program and Erase
  - Page Program : (512 + 16)Byte
  - Block Erase    : (8K + 256)Byte
  - Status Register

 528-Byte Page Read Operation
  - Random Access      : 10s(Max.)
  - Serial Page Access : 50ns(Min.)

 Fast Write Cycle Time
  - Program Time       : 250s(Typ.)
  - Block Erase Time :  2ms(Typ.)

 Command/Address/Data Multiplexed I/O port
Hardware Data Protection
  - Program/Erase Lockout During Power Transitions
 Reliable CMOS Floating-Gate Technology
-Endurance : 1Million Program/Erase Cycles
 - Data Retention : 10 years
 Command Register Operation
44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)
  - Forward Type



Pinout

  Connection Diagram


Specifications

Parameter Symbol Rating Unit
Voltage on any pin relative to VSS VIN -0.6 to +7.0 V
Temperature Under Bias K9F3208W0A-TCB0 TBIAS -10 to +125
K9F3208W0A-TIB0 -40 to +125
Storage Temperature TSTG -65 to +150  



Description

The K9F3208W0A is a 4M(4,194,304)x8bit NAND Flash Mem-ory with a spare 128K(131,072)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typical 250s and an erase operation can be performed in typi-cal 2ms on an 8K-byte block.

Data in the page can be read out at 50ns cycle time per byte.The I/O pins serve as the ports for address and data input/out-put as well as command inputs. The on-chip write controller automates all program and erase system functions, including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F3208W0A extended reliability of 1,000,000 program/erase cycles by providing ECC(Error Cor-rection Code) with real time mapping-out algorithm. The K9F3208W0A is an optimum solution for large nonvolatile stor-age application such as solid state storage, digital voice recorder, digital still camera and other portable applications requiring nonvolatility.




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