FDG6302P

MOSFET SC70-6 P-CH -25V

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SeekIC No. : 00161971 Detail

FDG6302P: MOSFET SC70-6 P-CH -25V

floor Price/Ceiling Price

Part Number:
FDG6302P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 25 V
Gate-Source Breakdown Voltage : - 8 V Continuous Drain Current : 0.14 A
Resistance Drain-Source RDS (on) : 10 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-70-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Package / Case : SC-70-6
Drain-Source Breakdown Voltage : - 25 V
Gate-Source Breakdown Voltage : - 8 V
Resistance Drain-Source RDS (on) : 10 Ohms
Continuous Drain Current : 0.14 A


Features:

-25 V, -0.14 A  continuous, -0.4 A peak.
                R DS(ON)  = 10 W @ VGS = -4.5 V,                        
                R DS(ON)   = 13 W @ VGS = -2.7 V.
Very low level gate drive requirements allowing  direct
   operation in 3 V circuits (VGS(th)  < 1.5 V).
Gate-Source Zener for ESD ruggedness
   (>6kV Human Body Model).
Compact industry standard SC70-6 surface               
   mount package.



Specifications

Symbol Parameter FDG6302P Units
VDSS Drain-Source Voltage
-25
V
VGSS Gate-Source Voltage
-8
V
ID Drain/Output Current - Continuous
- Pulsed
-0.14 A
-0.4
PD Maximum Power Dissipation (Note 1) 0.3 W
TJ1,TSTG
Operating and Storage Temperature Range
-55 to 150 °C
°C
ESD Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100 pF / 1500 W) 6.0 kV
THERMAL CHARACTERISTICS
R0JA Thermal Resistance, Junction-to-Ambient (Note 1)
415
°C/W



Description

These FDG6302P dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.  This  device FDG6302P has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.




Parameters:

Technical/Catalog InformationFDG6302P
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C140mA
Rds On (Max) @ Id, Vgs10 Ohm @ 140mA, 4.5V
Input Capacitance (Ciss) @ Vds 12pF @ 10V
Power - Max300mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs0.31nC @ 4.5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDG6302P
FDG6302P



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