MOSFET SC70-6 P-CH -25V
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 25 V | ||
Gate-Source Breakdown Voltage : | - 8 V | Continuous Drain Current : | 0.14 A | ||
Resistance Drain-Source RDS (on) : | 10 Ohms | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SC-70-6 | Packaging : | Reel |
Symbol | Parameter | FDG6302P | Units |
VDSS | Drain-Source Voltage |
-25 |
V |
VGSS | Gate-Source Voltage |
-8 |
V |
ID | Drain/Output Current - Continuous - Pulsed |
-0.14 | A |
-0.4 | |||
PD | Maximum Power Dissipation (Note 1) | 0.3 | W |
TJ1,TSTG |
Operating and Storage Temperature Range |
-55 to 150 °C |
°C |
ESD | Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100 pF / 1500 W) | 6.0 | kV |
THERMAL CHARACTERISTICS | |||
R0JA | Thermal Resistance, Junction-to-Ambient (Note 1) |
415 |
°C/W |
These FDG6302P dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device FDG6302P has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Technical/Catalog Information | FDG6302P |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 P-Channel (Dual) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25° C | 140mA |
Rds On (Max) @ Id, Vgs | 10 Ohm @ 140mA, 4.5V |
Input Capacitance (Ciss) @ Vds | 12pF @ 10V |
Power - Max | 300mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 0.31nC @ 4.5V |
Package / Case | SC-70-6, SC-88, SOT-323-6, SOT-363 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDG6302P FDG6302P |