MOSFET Dual N-Chan Digital MOSFET; Automotive
FDG6301N_F085: MOSFET Dual N-Chan Digital MOSFET; Automotive
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 25 V | ||
Gate-Source Breakdown Voltage : | 8 V | Continuous Drain Current : | 0.22 A | ||
Resistance Drain-Source RDS (on) : | 7 Ohms | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SC70-6 | Packaging : | Reel |