Features: ` Fast Read Access Time: 70/90/120 ns` Low Power CMOS Dissipation:Active: 30 mA max (CMOS/TTL levels)Standby: 1 mA max (TTL levels)Standby: 100 mA max (CMOS levels)` High Speed Programming:10 ms per byte2 Sec Typ Chip Program` 0.5 Seconds Typical Chip-Erase` 12.0V ± 5% Programming and Er...
CAT28F010: Features: ` Fast Read Access Time: 70/90/120 ns` Low Power CMOS Dissipation:Active: 30 mA max (CMOS/TTL levels)Standby: 1 mA max (TTL levels)Standby: 100 mA max (CMOS levels)` High Speed Programming...
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The CAT28F010 is a high speed 128K x 8-bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after-sale code updates. Electrical erasure of the full memory contents is achieved typically within 0.5 second.
CAT28F010 is pin and Read timing compatible with standard EPROM and E2PROM devices. Programming and Erase are performed through an operation and verify algorithm. The instructions are input via the I/O bus, using a two write cycle scheme. Address and Data are latched to free the I/O bus and address bus during the write operation.
The CAT28F010 is manufactured using Catalyst's advanced CMOS floating gate technology. It is designed o endure 100,000 program/erase cycles and has a data retention of 10 years. The device is available in JEDEC pproved 32-pin plastic DIP, 32-pin PLCC or 32-pin SOP packages.