CAT22C10

Single 5V Supply
Fast RAM Access Times:
200ns
300ns
Infinite E2PROM to RAM Recall
CMOS and TTL Compatible I/O
Power Up/Down Protection
100,000 Program/Erase Cycles (E2PROM)

Low CMOS Power Consumption:
Active: 40mA Max.
Standby: 30 mA Max.
JEDEC Standard Pinouts:
18-pin DIP
16-pin SOIC
10 Year Data Retention
Commercial, Industrial and Automotive
Temperature Ranges

The CAT22C10 NVRAM is a 256-bit nonvolatile memory organized as 64 words x 4 bits. The high speed Static RAM array is bit for bit backed up by a nonvolatile E2PROM array which allows for easy transfer of data from RAM array to E2PROM (STORE) and from E2PROM to RAM (RECALL). CAT22C10 STORE operations are completed in 10ms max. and RECALL operations typically within 1.5ms. The CAT22C10 features unlimited RAM write operations either through external RAM writes or internal recalls from E2PROM. Internal false store protection circuitry prohibits STORE operations when V_CC is less than 3.0V.

The CAT22C10 is manufactured using Catalyst's advanced CMOS floating gate technology. It is designed to endure 100,000 program/erase cycles (E2PROM) and has a data retention of 10 years. The device is available in JEDEC approved 18-pin plastic DIP and 16- pin SOIC packages.