2N7008

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Packaging : Bulk
Drain-Source Breakdown Voltage : 60 V
Package / Case : TO-92
Resistance Drain-Source RDS (on) : 7.5 Ohms
Continuous Drain Current : 230 mA


Features:

►Free from secondary breakdown
►Low power drive requirement
►Ease of paralleling
►Low CISS and fast switching speeds
►Excellent thermal stability
►Integral SOURCE-DRAIN diode
►High input impedance and high gain
►Complementary N- and P-Channel devices



Application

►Motor controls
►Converters
►Amplifi ers
►Switches
►Power supply circuits
►Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)



Pinout




Specifications

Parameter                                                      Value
DRAIN to SOURCE voltage                             BV_DSS
DRAIN to GATE voltage                                  BV_DGS
GATE to SOURCE voltage                               ±30V
Operating and storage temperature              -55 to +150
Soldering temperature1                                 +300

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.

Note 1. Distance of 1.6mm from case for 10 seconds.

Description

The Supertex 2N7008 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coeffi cient inherent in MOS devices. Characteristic of all MOS structures, 2N7008 is free from thermal runaway and thermally-induced secondary breakdown.

Supertex's vertical DMOS FETs 2N7008 are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Parameters:

Technical/Catalog Information	2N7008
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	150mA
Rds On (Max) @ Id, Vgs	7.5 Ohm @ 50mA, 5V
Input Capacitance (Ciss) @ Vds	50pF @ 25V
Power - Max	400mW
Packaging	Bulk
Gate Charge (Qg) @ Vgs	-
Package / Case	TO-92-3, TO-226AA (Straight Leads)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N7008 2N7008 2N7008OS ND 2N7008OSND 2N7008OS