2N7000

MOSFET N-CHANNEL 60V 200mA

product image

2N7000 Picture
SeekIC No. : 00149061 Detail

2N7000: MOSFET N-CHANNEL 60V 200mA

floor Price/Ceiling Price

US $ .05~.07 / Piece | Get Latest Price
Part Number:
2N7000
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.07
  • $.06
  • $.05
  • $.05
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.2 A
Resistance Drain-Source RDS (on) : 1.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92 Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Drain-Source Breakdown Voltage : 60 V
Package / Case : TO-92
Continuous Drain Current : 0.2 A
Resistance Drain-Source RDS (on) : 1.2 Ohms


Features:

High input impedance
Low gate threshold voltage
Low drain-source ON resistance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No thermal runaway
No secondary breakdown





Pinout






Specifications

Symbol Value Unit
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage VDGS 60 V
Gate-Source Voltage (pulsed) VGS ± 20 V
Drain Current (continuous) ID 300 mA
Power Dissipation at Tamb = 25 °C Ptot 8301) mW
Junction Temperature
TJ 150 °C
Storage Temperature Range TS 65 to +150 °C





Parameters:

Technical/Catalog Information2N7000
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C200mA
Rds On (Max) @ Id, Vgs5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 50pF @ 25V
Power - Max400mW
PackagingBulk
Gate Charge (Qg) @ Vgs-
Package / CaseTO-92
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2N7000
2N7000
2N7000FS ND
2N7000FSND
2N7000FS



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Isolators
Power Supplies - External/Internal (Off-Board)
Memory Cards, Modules
Cable Assemblies
Prototyping Products
DE1
Batteries, Chargers, Holders
View more