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ZXTN25050DFH

Features: • High power dissipation SOT23 package• High peak current• High gain• Low saturation voltage• 150V forward blocking voltage• 5V reverse blocking voltageApplication• MOSFET gate drivers• Power switches• Motor control• DC fansR...

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SeekIC No. : 004552677 Detail

ZXTN25050DFH: Features: • High power dissipation SOT23 package• High peak current• High gain• Low saturation voltage• 150V forward blocking voltage• 5V reverse blocking voltage...

ZXTN25050DFH Data Sheet

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Part Number:
ZXTN25050DFH
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/8

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Product Details

Description



Features:

• High power dissipation SOT23 package
• High peak current
• High gain
• Low saturation voltage
• 150V forward blocking voltage
• 5V reverse blocking voltage




Application

• MOSFET gate drivers
• Power switches
• Motor control
• DC fans
• DC-DC converters




Pinout

Connection Diagram




Specifications

Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
150
V
Collector-emitter voltage (forward blocking voltage)
VCEX
150
V
Collector-Emitter voltage
VCEO
50
V
Emitter-collector voltage (reverse blocking)

VECO

5

V

Emitter-base voltage
VEBO
7
V
Continuous collector current(a)
IC
4
A
Base current
IB
1
A
Peak pulse current
ICM
10
A
Power dissipation at TA=25(a)
Linear derating factor
PD
0.73
5.84
W
mW/
Power dissipation at TA =25(b)
Linear derating factor
PD
1.05
8.4
W
mW/
Power dissipation at TA =25(c)
Linear derating factor
PD
1.25
9.6
W
mW/
Power dissipation at TA =25(d)
Linear derating factor
PD
1.81
14.5
W
mW/
Operating and storage temperature range
Tj, Tstg
-55 to 150


Part Number ZXTN25050DFH
Product Type NPN
VCEO (V) 50
IC(A) 4
ICM (A) 10
PD (W) 1.25
hFE Min 300
20
hFE Max 900
@I C (A) 0.01
4
VCE(SAT) Max (mV) 60
210
@ IC (A) 1
4
@ IB (mA) 100
400
fT Min (MHz) 200
RCE (SAT) (m) 40





Description

Advanced process capability and package design ZXTN25050DFH have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.






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