Features: • Low profile SOT23F package• Low saturation voltage• High gain• High power dissipationApplication• LED driver• Boost converter• Logic interface• Motor driveSpecifications SYMBOL PARAMETER RATING UNIT VCBO Collector to base volt...
ZXTN07012EFF: Features: • Low profile SOT23F package• Low saturation voltage• High gain• High power dissipationApplication• LED driver• Boost converter• Logic interface...
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SYMBOL | PARAMETER | RATING | UNIT |
VCBO | Collector to base voltage | 20 | V |
VCEO | Collector to emitter voltage | 12 | V |
VCEO | Emitter-collector voltage (reverse blocking) | 3 | V |
VEBO | Emitter to base voltage | 7 | V |
IC | Continuous collector current(c) | 4.5 | A |
ICM | Peak pulse current | 1 | A |
IB | Base current | 10 | A |
PD | Power dissipation at Tamb =25(a) Linear derating factor |
0.84 6.72 |
W mW/ |
PD | Power dissipation at Tamb =25(b) Linear derating factor |
1.34 10.72 |
W mW/ |
PD | Power dissipation at Tamb =25(c) Linear derating factor |
1.50 12.0 |
W mW/ |
PD | Power dissipation at Tamb =25(d) Linear derating factor |
2.0 16.0 |
W mW/ |
Tj | Junction temperature | 150 | |
Tstg | Storage temperaturerange | -55 to +150 |
This low voltage NPN transistor ZXTN07012EFF has been designed for applications requiring high gain and very low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance.