Features: • High power dissipation SOT23 package• High peak current• High gain• Low saturation voltage• 130V forward blocking voltage• 6V reverse blocking voltageApplication• MOSFET gate drivers• Power switches• Motor control• DC fansR...
ZXTN25040DFH: Features: • High power dissipation SOT23 package• High peak current• High gain• Low saturation voltage• 130V forward blocking voltage• 6V reverse blocking voltage...
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Parameter | Symbol | Limit | Unit |
Collector-base voltage | VCBO | 130 | V |
Collector-emitter voltage (forward blocking) | VCEX | 130 | V |
Collector-emitter voltage | VCEO | 40 | V |
Emitter-collector voltage (reverse blocking) | VECO | 6 | V |
Emitter-base voltage | VEBO | 7 | V |
Continuous collector current(c) | IC | 4 | A |
Base current | IB | 1 | A |
Peak pulse current | ICM | 10 | A |
Power dissipation at Tamb =25°C(a) Linear derating factor |
PD | 0.73 5.84 |
W mW/ |
Power dissipation at Tamb =25°C(b) Linear derating factor |
PD | 1.05 8.4 |
W mW/ |
Power dissipation at Tamb =25°C(c) Linear derating factor |
PD | 1.25 9.6 |
W mW/ |
Power dissipation at Tamb =25°C(d) Linear derating factor |
PD | 1.81 14.5 |
W mW/ |
Operating and storage temperature range | Tj, Tstg | - 55 to 150 |
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b)Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d)As (c) above measured at t<5secs.
Part Number | ZXTN25040DFH |
Product Type | NPN |
VCEO (V) | 40 |
IC(A) | 4 |
ICM (A) | 10 |
PD (W) | 1.25 |
hFE Min | 300 30 |
hFE Max | 900 |
@I C (A) | 0.01 4 |
VCE(SAT) Max (mV) | 55 190 |
@ IC (A) | 1 4 |
@ IB (mA) | 100 400 |
fT Min (MHz) | 190 |
RCE (SAT) (m) | 35 |
Advanced process capability and package design ZXTN25040DFH have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.