ZXTN25020DFL Selling Leads, Price trend, ZXTN25020DFL DataSheet download, circuit diagram from SeekIC.com

Features: • High peak current• Low saturation voltage• 100V forward blocking voltageApplication• MOSFET and IGBT gate driving• DC-DC conversion• LED driving• Interface between low voltage IC's and loadsPinoutSpecifications Part Number ZXTN25020DFL ...

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SeekIC No. : 004552671 Detail

ZXTN25020DFL: Features: • High peak current• Low saturation voltage• 100V forward blocking voltageApplication• MOSFET and IGBT gate driving• DC-DC conversion• LED driving•...

ZXTN25020DFL Data Sheet

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Part Number:: ZXTN25020DFL
Supply Ability:: 5000

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1~5000

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15 Days

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Upload time: 2024/11/7

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Product Details

Description

Features:

• High peak current
• Low saturation voltage
• 100V forward blocking voltage

Application

• MOSFET and IGBT gate driving
• DC-DC conversion
• LED driving
• Interface between low voltage IC's and loads

Pinout

Connection Diagram

Specifications

Part Number	ZXTN25020DFL
Product Type	NPN
V_CEO(V)	20
I_C (A)	2
I_CM (A)	8
P_D (W)	0.35
h_FE Min	300 220
h_FE Max	900
@ I_C (A)	0.01 2
V_{CE (SAT)} Max (mV)	100 225
@ I_C (A)	1 2
@ I_B (mA)	20 20
f_T Min (MHz)	215
R_{CE (SAT)} (m)	55

Parameter	Symbol	Limit	Unit
Collector-base voltage	V_CBO	100	V
Collector-emitter voltage (forward blocking)	V_CEX	100	V
Collector-emitter voltage	V_CEO	20	V
Emitter-collector voltage (reverse blocking)	V_ECX	5	V
Emitter-base voltage	V_EBO	7	V
Continuous Collector current^(c)	I_C	2	A
Base current	I_B	500	A
Peak pulse current	I_CM	8	A
Power dissipation at T_amb =25(a) Linear derating factor	P_D	350 2.8	W mW/
Operating and storage temperature range	T_j, T_stg	-55 to 150

Description

Advanced process capability ZXTN25020DFL has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.

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