Features: • Higher power dissipation SOT23 package• High peak current• Low saturation voltage• 100V forward blocking voltage• 5V reverse blocking voltageApplication• DC - DC converters• MOSFET and IGBT gate driving• LED driver• Motor drive̶...
ZXTN25020DFH: Features: • Higher power dissipation SOT23 package• High peak current• Low saturation voltage• 100V forward blocking voltage• 5V reverse blocking voltageApplicationR...
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PARAMETER |
SYMBOL |
LIMIT |
UNIT |
Collector-Base Voltage |
VCBO |
100 |
V |
Collector-emitter voltage (forward blocking) |
VCEX |
100 |
V |
Collector-Emitter Voltage |
VCEO |
20 |
V |
Emitter-collector voltage (reverse blocking) |
VECO |
5 |
V |
Emitter-Base Voltage |
VEBO |
7 |
V |
Continuous collector current (c) |
IC |
4.5 |
A |
Peak Pulse Current (c) |
ICM |
15 |
A |
Power Dissipation at TA=25 (a) Linear Derating Factor |
PD |
0.73 5.84 |
W mW/ |
Power Dissipation at TA=25 (b) Linear Derating Factor |
PD |
1.05 8.4 |
W mW/ |
Power Dissipation at TA=25 (d) Linear Derating Factor |
PD |
1.25 9.6 |
W mW/ |
Power Dissipation at TA=25 (e) Linear Derating Factor |
PD |
1.81 14.5 |
W mW/ |
Operating and Storage Temperature Range |
Tj:Tstg |
-55 to +150 |
Part Number | ZXTN25020DFH |
Product Type | NPN |
VCEO(V) | 20 |
IC (A) | 4.5 |
ICM (A) | 15 |
PD (W) | 1.25 |
hFE Min | 300 120 |
hFE Max | 900 |
@ IC (A) | 0.1 4.5 |
VCE (SAT) Max (mV) | 43 265 |
@ IC (A) | 1 4.5 |
@ IB (mA) | 100 90 |
fT Min (MHz) | 215 |
RCE (SAT) (m) | 28 |
Advanced process capability and package design ZXTN25020DFH have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.