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ZXTN25012EFL

Features: • High peak current• Low saturation voltage• 6V reverse blocking voltageApplication• MOSFET and IGBT gate driving• DC-DC conversion• LED driving• Interface between low voltage IC's and loadPinoutSpecifications Part Number ZXTN25012EFL P...

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SeekIC No. : 004552666 Detail

ZXTN25012EFL: Features: • High peak current• Low saturation voltage• 6V reverse blocking voltageApplication• MOSFET and IGBT gate driving• DC-DC conversion• LED driving• ...

ZXTN25012EFL Data Sheet

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Part Number:
ZXTN25012EFL
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/8

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Product Details

Description



Features:

• High peak current
• Low saturation voltage
• 6V reverse blocking voltage




Application

• MOSFET and IGBT gate driving
• DC-DC conversion
• LED driving
• Interface between low voltage IC's and load




Pinout

Connection Diagram




Specifications

Part Number ZXTN25012EFL
Product Type NPN
VCEO(V) 12
IC (A) 2
ICM (A) 15
PD (W) 0.35
hFE Min 500
210
hFE Max 1500
@ IC (A) 0.01
5
VCE (SAT) Max (mV) 85
130
@ IC (A) 1
2
@ IB (mA) 10
40
fT Min (MHz) 260
RCE (SAT) (m) 46


Collector-base voltage VCBO ...........................20 V
Collector-emitter voltage VCEO....................... 12 V
Emitter-collector voltage VECO .......................4.5 V
Emitter-base voltage VEBO ...............................7 V
Continuous collector current(a) IC ....................2 A
Base current IB ...........................................500 mA
Peak pulse current ICM ....................................15 A
Power dissipation @ Tamb =25(a) PD .....350 mW
Linear derating factor............................... 2.8 mW/
Operating and storage temperature range Tj, Tstg....... - 55 to 150
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.




Description

Advanced process capability ZXTN25012EFL has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.






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