Features: · Low saturation voltage for reduced power dissipation· 1 to 2 amp high current capability· Pb-free· SOT23 packageApplication·Power MOSFET gate driving·Low loss power switchingSpecifications Part Number ZXTN2038F Product Type NPN VCEO (V) 60 IC (A) 1 ICM (A) 2 ...
ZXTN2038F: Features: · Low saturation voltage for reduced power dissipation· 1 to 2 amp high current capability· Pb-free· SOT23 packageApplication·Power MOSFET gate driving·Low loss power switchingSpecificatio...
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Part Number | ZXTN2038F |
Product Type | NPN |
VCEO (V) | 60 |
IC (A) | 1 |
ICM (A) | 2 |
PD (W) | 0.35 |
hFE Min | 100 80 |
hFE Max | 300 |
@ IC (A) | 0.5 1 |
VCE (SAT) Max (mV) | 250 500 |
@ IC (A) | 0.5 1 |
@ IB (mA) | 50 100 |
fT Min (MHz) | 150 |
RCE (SAT) (m) | - |
Parameter |
Symbol |
Limit |
Unit |
Collector-base voltage |
VCBO |
80 |
V |
Collector-emitter voltage |
VCEV |
80 |
V |
Collector-emitter voltage |
VCEO |
60 |
V |
Emitter-base voltage |
VEBO |
5.0 |
V |
Peak pulse current |
ICM |
2 |
A |
Continuous collector current* |
IC |
1 |
A |
Peak base current |
IBM |
1 |
A |
Power dissipation @ TA=25* |
PD |
350 |
mW |
Operating and storage temperature |
Tj:Tstg |
55 to +150 |
NOTES:
* For a device surface mounted on a 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
This transistor ZXTN2038F combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching.