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ZXTN2010Z

Features: • Extremely low equivalent on-resistance; RSAT = 30mV at 6A• 5 amps continuous current• Up to 20 amps peak current• Very low saturation voltages• Excellent hFE characteristics up to 10 amps Application• Emergency lighting circuits• Motor drivin...

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ZXTN2010Z: Features: • Extremely low equivalent on-resistance; RSAT = 30mV at 6A• 5 amps continuous current• Up to 20 amps peak current• Very low saturation voltages• Excellent hF...

ZXTN2010Z Data Sheet

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Part Number:
ZXTN2010Z
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Extremely low equivalent on-resistance; RSAT = 30mV at 6A
• 5 amps continuous current
• Up to 20 amps peak current
• Very low saturation voltages
• Excellent hFE characteristics up to 10 amps






Application

• Emergency lighting circuits
• Motor driving (including DC fans)
• Solenoid, relay and actuator drivers
• DC-DC modules
• Backlight inverters
• Power switches
• MOSFET gate drivers




Pinout

Connection Diagram




Specifications

PARAMETER SYMBOL
LIMIT
UNIT
Collector-base voltage VCBO
150
V
Collector-emitter voltage VCEO
60
V
Emitter-base voltage VEBO
7
V
Peak Pulse Current ICM
20
A
Continuous Collector Current(a) IC
5
A
Power Dissipation at TA=25°C(a)
Linear Derating Factor
 PD
1.5
12
W
mW/
Power Dissipation at TA=25°C(b)
Linear Derating Factor
 PD
2.1
16.8
W
mW/
Operating and Storage Temperature Range Tj:Tstg
-55 to +150


Part Number ZXTN2010Z
Product Type NPN
VCEO (V) 60
IC (A) 5
ICM (A) 20
PD (W) 2.1
hFE Min 100
20
hFE Max 300
@ IC (A) 2
10
VCE (SAT) Max (mV) 55
230
@ IC (A) 1
6
@ IB (mA) 100
300
fT Min (MHz) 130
RCE (SAT) (m) 30





Description

Packaged in the SOT89 outline ZXTN2010Z this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and variousdriving and power management functions.






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