Features: • High forward blocking voltage• Low saturation voltage• High gain• Low profile high dissipation packageApplication• Relay and solenoid driving• DC fans• Industrial and automotive switchingSpecifications SYMBOL PARAMETER RATING UNIT VC...
ZXTN19100CFF: Features: • High forward blocking voltage• Low saturation voltage• High gain• Low profile high dissipation packageApplication• Relay and solenoid driving• DC fans...
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SYMBOL | PARAMETER | RATING | UNIT |
VCBO | Collector to base voltage | 200 | V |
VCEX | Collector-emitter voltage (forward blocking) | 200 | V |
VCEO | Collector to emitter voltage | 100 | V |
VECO | Emitter-collector voltage (reverse blocking) | 5 | V |
VEBO | Emitter to base voltage | 7 | V |
IC | Continuous collector current(c) | 4.5 | A |
ICP | Peak pulse current | 1 | A |
IB | Base current | 6 | A |
PD | Power dissipation at Tamb =25(a) Linear derating factor |
0.84 6.72 |
W mW/ |
PD | Power dissipation at Tamb =25(b) Linear derating factor |
1.34 10.72 |
W mW/ |
PD | Power dissipation at Tamb =25(c) Linear derating factor |
1.50 12.0 |
W mW/ |
PD | Power dissipation at Tamb =25(d) Linear derating factor |
2.0 16.0 |
W mW/ |
Tj | Junction temperature | 150 | |
Tstg | Storage temperaturerange | -55 to +150 |
Advanced process capability ZXTN19100CFF has been used to maximise the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance