Features: • High gain• Low saturation voltage• Low profile small outline packageApplication• Motor drive• Siren driverPinoutSpecifications Parameter Symbol Limit Unit Collector-base voltage VCBO 160 V Collector-emitter voltage (forward b...
ZXTN19060CFF: Features: • High gain• Low saturation voltage• Low profile small outline packageApplication• Motor drive• Siren driverPinoutSpecifications Parameter Symbol ...
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Parameter |
Symbol |
Limit |
Unit |
Collector-base voltage |
VCBO |
160 |
V |
Collector-emitter voltage (forward blocking) |
VCEX |
160 |
V |
Collector-emitter voltage |
VCEO |
60 |
V |
Emitter-collector voltage (reverse blocking) |
VECO |
6 |
V |
Emitter-base voltage |
VEBO |
7 |
V |
Continuous collector current(c) |
IC |
5.5 |
A |
Base current |
IB |
1 |
A |
Peak pulse current |
ICM |
12 |
A |
Power dissipation at Tamb =25(a) Linear derating factor |
PD |
0.84 6.72 |
W mW/ |
Power dissipation at Tamb =25(b) Linear derating factor |
PD |
1.34 10.72 |
W mW/ |
Power dissipation at Tamb =25(c) Linear derating factor |
PD |
1.50 12.0 |
W mW/ |
Power dissipation at Tamb =25(d) Linear derating factor |
PD |
2.0 16.0 |
W mW/ |
Operating and Storage Temperature Range |
TJ, TSTG |
- 55 to 150 |
This mid voltage NPN transistor ZXTN19060CFF has been designed for applications requiring high gain and low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance.