Features: • Extremely Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE characterised up to 20A• IC=6A Continuous Collector Current• MSOP8 packageApplication• DC - DC Converters• Power Management Functions• Power switches• Mot...
ZXT14P12DX: Features: • Extremely Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE characterised up to 20A• IC=6A Continuous Collector Current• MSOP8 packageAppl...
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Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE ...
PARAMETER | SYMBOL |
LIMIT |
UNIT |
Collector-base voltage | VCBO |
-20 |
V |
Collector-emitter voltage | VCEO |
-12 |
V |
Emitter-base voltage | VEBO |
-7.5 |
V |
Peak Pulse Current | ICM |
-40 |
A |
Continuous Collector Current | IC |
-6 |
A |
Base Current | IB |
-500 |
mA |
Power Dissipation at TA=25°C(a) Linear Derating Factor |
PD |
1.1 8.8 |
W mW/ |
Power Dissipation at TA=25°C(b) Linear Derating Factor |
PD |
1.8 14.4 |
W mW/ |
Operating and Storage Temperature Range | Tj:Tstg |
-55 to +150 |
This new 4th generation ultra low saturation transistor ZXT14P12DX utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.