ZXT13N15DE6 Selling Leads, Price trend, ZXT13N15DE6 DataSheet download, circuit diagram from SeekIC.com

Features: • Extremely Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE characterised up to 15A• IC=5A Continuous Collector Current• SOT23-6 packageApplication• DC - DC Converters• Power Management Functions• Power switches• M...

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SeekIC No. : 004552595 Detail

ZXT13N15DE6: Features: • Extremely Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE characterised up to 15A• IC=5A Continuous Collector Current• SOT23-6 packageAp...

ZXT13N15DE6 Data Sheet

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Part Number:: ZXT13N15DE6
Supply Ability:: 5000

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Upload time: 2024/12/21

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Features: • 5 amps continuous current• Up to 10 amps peak current• Low equivalen...
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US $.37 - .55 / Piece

Transistors Bipolar (BJT) NPN 75V 4500MA
ZXT10N15DE6 evaluate
Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE ...

Product Details

Description

Features:

• Extremely Low Equivalent On Resistance
• Extremely Low Saturation Voltage
• h_FE characterised up to 15A
• I_C=5A Continuous Collector Current
• SOT23-6 package

Application

• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control

Pinout

Connection Diagram

Specifications

Part Number	ZXT13N15DE6
Product Type	NPN
V_CEO(V)	15
I_C (A)	5
I_CM (A)	15
P_D (W)	1.1
h_FE Min	300 200
h_FE Max	900
@ I_C (A)	1 5
V_{CE (SAT)} Max (mV)	70 200
@ I_C (A)	1 5
@ I_B (mA)	10 100
f_T Min (MHz)	72
R_{CE (SAT)} (m)	29

PARAMETER	SYMBOL	LIMIT	UNIT
Collector-base voltage	V_CBO	40	V
Collector-emitter voltage	V_CEO	15	V
Emitter-base voltage	V_EBO	7.5	V
Peak Pulse Current	I_CM	15	A
Continuous Collector Current	I_C	5	A
Base Current	I_B	500	mA
Power Dissipation at TA=25°C(a) Linear Derating Factor	P_D	1.1 8.8	W mW/
Power Dissipation at TA=25°C(b) Linear Derating Factor	P_D	1.7 13.6	W mW/
Operating and Storage Temperature Range	T_j:T_stg	-55 to +150

Description

This ZXT13N15DE6 new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.

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