ZXT11N15DF

Features: • Extremely Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE characterised up to 5A• IC=3A Continuous Collector Current• SOT23 packageApplication• DC - DC Converters• Power Management Functions• Power switches• Moto...

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SeekIC No. : 004552588 Detail

ZXT11N15DF: Features: • Extremely Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE characterised up to 5A• IC=3A Continuous Collector Current• SOT23 packageAppli...

floor Price/Ceiling Price

Part Number:
ZXT11N15DF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Extremely Low Equivalent On Resistance
• Extremely Low Saturation Voltage
• hFE characterised up to 5A
• IC=3A Continuous Collector Current
• SOT23 package





Application

• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control





Pinout

  Connection Diagram




Specifications

PARAMETER SYMBOL
LIMIT
UNIT
Collector-base voltage VCBO
40
V
Collector-emitter voltage VCEO
15
V
Emitter-base voltage VEBO
7.5
V
Peak Pulse Current ICM
5
A
Continuous Collector Current IC
3
A
Base Current IB
500
mA
Power Dissipation at TA=25°C(a)
Linear Derating Factor
PD
625
5
W
mW/
Power Dissipation at TA=25°C(b)
Linear Derating Factor
PD
806
6.4
W
mW/
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
</

Part Number ZXT11N15DF
Product Type NPN
VCEO(V) 15
IC (A) 3
ICM (A) 5
PD (W) 0.625
hFE Min 300
200
hFE Max 900
@ IC (A) 0.2
3
VCE (SAT) Max (mV) 80
150
@ IC (A) 1
3
@ IB (mA) 10
150
fT Min (MHz) 145
RCE (SAT) (m) 37





Description

This ZXT11N15DF new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.






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