Features: • Extremely Low VF, fast switching Schottky• IF= 1.65A Continuous Forward Current• 3mm x 2mm MLPApplication• DC-DC Converters• DC-DC Modules• Mosfet gate drive circuits• Charging circuits• Mobile Phones• Motor ControlSpecifications ...
ZXSDS2M832TC: Features: • Extremely Low VF, fast switching Schottky• IF= 1.65A Continuous Forward Current• 3mm x 2mm MLPApplication• DC-DC Converters• DC-DC Modules• Mosfet gat...
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Specifications Product Type Schottky Part Number ZXSDS2M832 Max Average Rectified Cu...
Parameter | Symbol |
Rating |
Unit |
Reverse Voltage | VR |
60 |
V |
Forward Voltage @ IF = 1000mA | VF |
600 |
mV |
Forward Current | IF |
1.65 |
A |
Average Forward Current D=50%, t<=300us |
IFAV |
1.24 |
A |
Non Repetitive Forward Current t<=100us Non Repetitive Forward Current t<=10ms |
IFSM |
16.8 |
A |
Power Dissipation at TA=25 (a)(f) Linear Derating Factor |
PD |
1.2 |
W |
Power Dissipation at TA=25 (b)(f) Linear Derating Factor |
PD |
2 |
W |
Power Dissipation at TA=25 (c)(f) Linear Derating Factor |
PD |
0.8 |
W |
Power Dissipation at TA=25 (d)(f) Linear Derating Factor |
PD |
0.9 |
W |
Power Dissipation at TA=25 (d)(g) Linear Derating Factor |
PD |
1.36 |
W |
Power Dissipation at TA=25 (e)(g) Linear Derating Factor |
PD |
2.4 |
W |
Storage Temp, Range | Tstg |
-55 to+150 |
|
Operating & Storage Temp, Range | Tj |
-55 to+150 |
NOTES
(a) For a dual device surface mounted on 8 sq. cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the center line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centerline into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centerline into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centerline into two separate areas with one half connected to each half of the dual device.
(f) For dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper of 1 oz weight, 1mm wide tracks and one half of the device active is Rth= 250/W giving a power rating of Ptot=400mW.
ZXSDS2M832TC Packaged in the new innovative 3x2 MLP (Micro Leaded Package) outline, this combination dual comprises two 60V 0.9A Schottky barrier diodes. This excellent combination provides users with highly efficient performance in applications including DC-DC converters and charging circuits.